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| AP03N70I-A Pb Free Plating Product Advanced Power Electronics Corp. Repetitive Avalanche Rated Fast Switching Simple Drive Requirement RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 3.6 3.3A G S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge G and sag in the toughest power system with the best combination of fast D S switching,ruggedized design and cost-effectiveness. TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 30 3.3 2.1 10 29 0.23 2 Units V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 67 3 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.3 65 Units /W /W 200712051-1/4 Data & specifications subject to change without notice AP03N70I-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 650 2 - Typ. 0.6 2 12 3 5 9 5 18 6 600 45 4 Max. Units 3.6 4 10 100 100 20 960 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=1.6A VDS=VGS, ID=250uA VDS=10V, ID=1.6A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=30V ID=3A VDS=480V VGS=10V VDD=300V ID=3A RG=10,VGS=10V RD=100 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol VSD trr Qrr Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 C , VDD=50V , L=15mH , RG=25 , IAS=3A. 3.Pulse width <300us , duty cycle <2%. o Parameter Forward On Voltage 3 2 Test Conditions IS=3A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/s Min. - Typ. 422 2580 Max. Units 1.5 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/4 AP03N70I-A 4 3 T C =25 C 3 o 10V 6.0V 2 T C =150 C o 10V 5.0V ID , Drain Current (A) ID , Drain Current (A) 2 4.5V 2 5.0V 1 1 4.0V 1 4.5V V G =4.0V 0 V G =3.5V 0 0 5 10 15 20 25 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3.0 2.5 I D =1.6A V G =10V Normalized BVDSS (V) Normalized RDS(ON) 1.1 2.0 1.0 1.5 1.0 0.9 0.5 0.8 -50 0 50 100 150 0.0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Temperature 100 5 Fig 4. Normalized On-Resistance v.s. Junction Temperature 4 10 VGS(th) (V) 1.3 T j = 150 o C IS (A) 1 T j = 25 o C 3 2 0.1 1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP03N70I-A 16 10000 f=1.0MHz 14 VGS , Gate to Source Voltage (V) 12 I D =3A V DS =480V C iss 10 C (pF) 8 100 6 C oss 4 C rss 2 0 0 2 4 6 8 10 12 14 16 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 10 Normalized Thermal Response (Rthjc) 0.2 10us 1 0.1 ID (A) 100us 1ms 0.1 0.05 0.02 PDM t 0.01 0 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C T c =25 C Single Pulse 0 1 10 100 o 10ms 100ms Single Pulse 0.01 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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